Physics of Interfaces
نویسنده
چکیده
Ii bas long been known that when a metal is placed in contact with a semiconductor a rectUying contact often results. This rectmcation is a result of an energy barrier between the metal and the semiconductor. Jn order to form a nonrectUying or ohmic contact, two general approaches can be applied: either (1) the barrier energy can be reduced to a low enough value that the thermally excited current over the barrier is large enough for the application involved or (2) the semiconductor can be doped to a high carrier density to allow quantum mechanical tunneling to take place. ·The physical principles of these processes are discussed in this article.
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